Effect of Inductively Coupled Plasma Etching in p-Type GaN Schottky Contacts
نویسندگان
چکیده
منابع مشابه
Correlation of Optical Emission and Ion Flux with GaN Etch Rate in Inductively Coupled Ar/Cl2 Plasma Etching
The etching of GaN was investigated in an Ar/Cl2 inductively coupled plasma. Optical emission spectroscopy and an ion flux probe were used to obtain insight into the etch mechanisms during processing. Langmuir probe measurements were also used to determine the basic Ar/Cl2 plasma characteristics. Etch rates of 500 nm/min were obtained at relatively low Cl2 fractions of 50%. The dominant emissio...
متن کاملDamage Free Etching for Gate Process of GaAs MESFET by ICP Method
Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the u...
متن کاملEvolution of surface roughness of AlN and GaN induced by inductively coupled Cl2 ÕAr plasma etching
We study the effects of plasma etching on the evolution of surface roughness of GaN and AlN. The etch-induced roughness is investigated using atomic force microscopy by systematically varying plasma power, chamber pressure, and Cl2 /Ar mixture gas composition. GaN etches three to four times more rapidly than AlN for identical plasma conditions. For both GaN and AlN, we find that the surface rou...
متن کاملSelective Area Epitaxy of GaN Stripes With Sub-200 nm Periodicity
We present growth studies on gallium nitride (GaN) stripes with {101̄1} side facets grown on c-oriented GaN templates on sapphire. Via plasma enhanced chemical vapor deposition (PECVD), a 20 nm thick SiO2 mask is deposited on top of the templates. Afterwards, a polymethylmethacrylate (PMMA) based resist is patterned with stripes oriented along the GaN a-direction by electron beam (e-beam) lithog...
متن کاملEffect of Silicon Nanowire on Crystalline Silicon Solar Cell Characteristics
Nanowires (NWs) are recently used in several sensor or actuator devices to improve their ordered characteristics. Silicon nanowire (Si NW) is one of the most attractive one-dimensional nanostructures semiconductors because of its unique electrical and optical properties. In this paper, silicon nanowire (Si NW), is synthesized and characterized for application in photovoltaic device. Si NWs are ...
متن کامل